System Parameters | Specifications | Comments |
Metrology type | Non-destructive ED-XRF and optical techniques |
Self-test monitoring system |
Wafer size | Up to 300mm | |
X/Y stages resolution | 0.5µm | |
Z stage resolution | 50nm | |
Back side camera | Easy calibration feature | Auto calibration mode |
Sample handling | Manual loading | |
Automation | Full wafer capability | 300mm and smaller |
Navigation | Precise stages complemented with image recognition algorithm |
Sub-micron fast navigation to single feature center |
SW user interface | Ease-of-use recipe creation and maintenance | Auto tool health monitoring and auto calibration |
XRF beam orientation | Vertical incidence micro-spot XRF | |
X-ray tube energy | 50KV, 50W | |
Detector type | Silicon drift detectors (SDD) | Optional: light element detector |
Detector resolution | 125eV +/- 5eV | With large solid angle |
X-ray beam spot size (FWHM@8 KeV) |
<10μm with poly-capillary optics Small / Regular capillary: Sn - 7μm / 17μm Cu- 10μm / 23μm |
Small spot for high energy elements Variety of spot sizes available |
Detectable range of elements | All elements down to C(6) | |
Multi-channel analyzer (MCA) | High efficiency | Larger than1 million photons per second |
2D Microscope | Resolution: 5 Megapixel lateral 0.1 μm |
Sub-micron navigation with pattern recognition |
3D Scanner | Ultra-fast 3D geometrical parameter extraction i.e. height, shape, structure Vertical resolution: 100 nm |
Insensitive to material absorption |
Magnification (optical microscope) |
X2, X10 | Option: X20, X50 and other |
Working distance | 150μm / 300μm / 1400μm |