Products & Technologies
Agate
Non-destructive inspection and metrology for the semiconductor and micro-electronic industries.
Overview
The Agate combines hybrid configuration- X-Ray, 2D microscope and 3D scanner, allowing significant advantages:
The advent of X-Ray technology for semiconductor metrology reduces the need for entrenched destructive methodologies requiring sample preparation.
XRF is capable of analyzing localized 3D structures and thus has an advantage over technologies which are surface sensitive only (including XRR, XRD and optics).
- Height and critical dimension (CD) monitoring
- Volume measurement
- 3D structure analysis such as misprocess, voids and surface defects
- Thin film multi-layer analysis
- Materials composition inspection
The advent of X-Ray technology for semiconductor metrology reduces the need for entrenched destructive methodologies requiring sample preparation.
XRF is capable of analyzing localized 3D structures and thus has an advantage over technologies which are surface sensitive only (including XRR, XRD and optics).
Technical Specifications
Configuration
XRF
2D Microscope
3D Scanner
| System Parameters | Specifications | Comments |
| Metrology type | Non-destructive ED-XRF and optical techniques |
Self-test monitoring system |
| Wafer size | Up to 300mm | |
| X/Y stages resolution | 0.5µm | |
| Z stage resolution | 50nm | |
| Back side camera | Easy calibration feature | Auto calibration mode |
| Sample handling | Manual loading | |
| Automation | Full wafer capability | 300mm and smaller |
| Navigation | Precise stages complemented with image recognition algorithm |
Sub-micron fast navigation to single feature center |
| SW user interface | Ease-of-use recipe creation and maintenance | Auto tool health monitoring and auto calibration |
XRF
| XRF beam orientation | Vertical incidence micro-spot XRF | |
| X-ray tube energy | 50KV, 50W | |
| Detector type | Silicon drift detectors (SDD) | Optional: light element detector |
| Detector resolution | 125eV +/- 5eV | With large solid angle |
| X-ray beam spot size (FWHM@8 KeV) |
<10μm with poly-capillary optics Small / Regular capillary: Sn - 7μm / 17μm Cu- 10μm / 23μm |
Small spot for high energy elements Variety of spot sizes available |
| Detectable range of elements | All elements down to C(6) | |
| Multi-channel analyzer (MCA) | High efficiency | Larger than1 million photons per second |
2D Microscope
| 2D Microscope | Resolution: 5 Megapixel lateral 0.1 μm |
Sub-micron navigation with pattern recognition |
3D Scanner
| 3D Scanner | Ultra-fast 3D geometrical parameter extraction i.e. height, shape, structure Vertical resolution: 100 nm |
Insensitive to material absorption |
| Magnification (optical microscope) |
X2, X10 | Option: X20, X50 and other |
| Working distance | 150μm / 300μm / 1400μm |
Applications
The unique triple-mode technology offers several film stack critical parameters measurements and quantities
Elemental analysis of low Z elements is performed with a state-of-the-art light elements detector
Analysis of multi-stack structures and thick mono-layers
The hybrid solution provides quick and reliable location of bump and wafer defects
Integrated 3D and 2D metrology and inspection in a single system
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