Products & Technologies

XRF Analysis

Reduces the need for entrenched destructive methodologies requiring sample preparation.

Overview

XwinSys has pioneered a hybrid approach to meet complex 3D structures in the semiconductor industry. Combining 3D optics with XRF enables a single measurement to achieve full inspection. Furthermore, the spot size of both analytical techniques is small enough to facilitate monitoring of localized features.

XRF is capable of analyzing localized 3D structures and thus has an advantage over technologies which are surface sensitive only (including XRR, XRD and optics).  

Energy Dispersive X-Ray Fluorescence EDXRF spectroscopy is the most accurate and economical analytical method for determination of the elemental composition of many types of materials.

This technique is non-destructive, requiring no sample preparation, and is suitable for almost all sample types and shapes. X-Ray Fluorescence (XRF) spectrometric analysis can be employed to measure a wide range of atomic elements, from Carbon (6) through Fermium (100), with low detection limits and high precision.

No edge exclusion- EDXRF comprises a vertical top-down beam source. Combined with the small spot size of the beam, this ensures there is no edge-exclusion zone for the tested material.  
For more information about the XRF technique please visit Learn XRF 

Technical Specifications

System Parameters Specifications Comments
XRF beam orientation Vertical incidence micro-spot XRF  
X-Ray tube energy 50KV, 50W  
Detector type Silicon drift detectors (SDD) Optional: light element detector
Detector resolution 125eV +/- 5eV With a large solid angle
X-Ray beam spot size (FWHM@8 KeV) <10µm with poly-capillary optics Small / Regular capillary: Sn - 7µm / 17µm Cu- 10µm / 23µm Small spot for high energy elements. A variety of spot sizes available
Detectable range of elements All elements down to C(6)  
Multi-channel analyzer (MCA) High efficiency Larger than1 million photons per second

Applications

Film Stack
The unique triple-mode technology offers several film stack critical parameters measurements and quantities
Ultra-Thin Films Measurement
Down to a single Angstrom (Å) based on an enhanced ED-XRF technique
Light Elements Detection
Elemental analysis of low Z elements is performed with a state-of-the-art light elements detector
UBM/RDL: Thickness & Composition Monitoring
Analysis of multi-stack structures and thick mono-layers
Bump Inspection - Composition & Height
The hybrid solution provides quick and reliable location of bump and wafer defects
Real Time Review - Detection & Metrology
Integrated 3D and 2D metrology and inspection in a single system