Products & Technologies

Sapphire

In-line Non-Destructive Thin Films & Ultra Thin Films ED-XRF Analysis

Overview

The Sapphire dedicated for FEOL applications is equipped with a multi symmetric array of state-of-the-art silicon drift detectors (SDD) including a light-element SDD allowing for highest throughput and precision (2 axis symmetry) of an expanded range of elements detection from Carbon upwards. The Sapphire has high sensitivity to layer thickness and composition variation of all elements of interest, equipped with both a large spot for ultra thin films and a small spot for patterened wafer features.

ED-XRF Technology Highlights:

OPAQUE LAYERS AND TRANSPARENT LAYERS
XRF is used to measure the thickness and composition of multi-layer thin films with no constraints on materials types and transparency properties. The tool is designed for advanced semiconductor process control of metals and transparent films.

MEASURES DOWN TO 1 ANGSTROM
Used to characterize film thickness for single layers or complex multilayer stacks ranging from a few angstroms or tenths of a nanometre to several micrometres with an excellent accuracy.

INSENSITIVE TO VIBRATION
XRF solutions are more cost effective than optical nanometer scale measurements which are extremely sensitive to any minor vibrations. The optical system enforces expensive preparing of a vibration free environment surrounding for safety actions.

PRECISE MEASUREMENTS
Thickness and composition measurements are based on precise intensity measurements followed with advanced Fundamental Parameters (FP) algorithm. No modelling assuming optically homogeneous and isotropic layers, or difficulties to determine optical models within an unstable process.

INSENSITIVITY TO SURFACE ROUGHNESS
Optical measurements roughness reduces the intensity (photons fly out of the detector) and prevents the measurement. A rough surface causes the penetration layer to look heterogeneous to the spectrometer. In general, the surface roughness (measured in μm) should not exceed the path length for 10% absorption of the radiation being measured.

INSENSITIVITY TO REFRACTIVE INDEX AND MATERIAL ABNORMALITIES
Thickness measurement are not affected by the different materials index of refraction. EDXRF thickness measurements relies on electronics detection resolving spectral peaks, not on light propagation and refraction. EDXRF is insensitive to material corrosion and diffusion unlike optical solutions.


Technical Specifications

Configurations
System Parameters Specifications Comments
Metrology type Non-destructive ED-XRF and optical techniques  Self-test monitoring system
Wafer size Up to 300mm  
X/Y stages resolution 0.5µm  Feature contour
Z stage resolution 50nm  
Back side camera Easy calibration feature Auto calibration mode
Sample handling Magazine robot  
Automation Full wafer capability Single to dual automatic loader
Navigation Precise stages complemented with an image recognition algorithm Sub-micron fast navigation to single feature center
SW user interface  Ease-of-use recipe creation and maintenance Auto tool health monitoring and auto calibration

XRF
XRF beam orientation Vertical incidence micro-spot XRF  
X-ray tube energy 50KV, 50W  
Detector type Silicon drift detectors (SDD) Optional: light element detector
Detector resolution 125eV +/- 5eV With large solid angle
X-ray beam spot size Small spot 18 µm (@25KeV)
Large spot 0.5 mm (@25KeV)
Small spot for high energy elements 
Variety of spot sizes available
Detectable range of elements All elements down to C(6)  
Multi-channel analyzer (MCA) High efficiency Larger than1 million photons per second

2D Microscope
2D Microscope Resolution: 5 Megapixel
lateral 0.1 µm
Sensor Technology: CCD Color
Sub-micron navigation with pattern recognition
Magnification (optical microscope) X2, X10 Option: X20, X50 and other

Applications

Ultra-Thin Films Measurement
Down to a single Angstrom (Å) based on an enhanced ED-XRF technique
Light Elements Detection
Elemental analysis of low Z elements is performed with a state-of-the-art light elements detector